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IRAMS10UP60B series 10a, 600v with internal shunt resistor www.irf.com 1 features ? internal shunt resistor ? integrated gate drivers and bootstrap diodes ? temperature monitor ? fully isolated package ? low v ce(on) non punch through igbt technology ? undervoltage lockout for all channels ? matched propagation delay for all channels ? schmitt-triggered input logic ? cross-conduction prevention logic ? lower di/dt gate driver for better noise immunity ? motor power range 0.4~0.75kw / 85~253 vac ? isolation 2000v rms /1min plug n drive tm integrated power module for appliance motor drive description international rectifier's IRAMS10UP60B is an integrated power module developed and optimized for electronic motor control in appliance applications such as washing machines and refrigerators. plug n drive technology offers an extremely compact, high performance ac motor-driver in a single isolated package for a very simple design. an internal shunt is also included and offers easy current feedback and overcurrent monitor for precise and safe operation. a built-in temperature monitor and over-current protection, along with the short-circuit rated igbts and integrated under-voltage lockout function, deliver high level of protection and fail-safe operation. the integration of the bootstrap diodes for the high-side driver section, and the single polarity power supply required to drive the internal circuitry, simplify the utilization of the module and deliver further cost reduction advantages. pd- 95830 reva absolute maximum ratings note 1: limited by current protection, see table "inverter section electrical characteristics" on page 3 parameter description max. value units v ces maximum igbt blocking voltage 600 v + positive bus input voltage 450 i o @ t c =25c rms phase current (see note 1) 10 i o @ t c =100c rms phase current (see note 1) 5 i pk maximum peak phase current (tp<100ms) 15 f p maximum pwm carrier frequency 20 khz p d maximum power dissipation per phase 20 w v iso isolation voltage (1min) 2000 v rms t j (igbt & diodes) operating junction temperature range -40 to +150 t j (driver ic) operating junction temperature range -40 to +150 t mounting torque range (m3 screw) 0.8 to 1.0 nm a c v
IRAMS10UP60B 2 www.irf.com internal electrical schematic - IRAMS10UP60B 23 vs1 24 ho1 25 vb1 1 vcc 2 hin1 3 hin2 4 hin3 5 lin1 lin2 6 lin3 7 f 8 itrip 9 en 10 rcin 11 vss 12 com 13 22 vb2 21 ho2 20 vs2 19 vb3 18 ho3 17 vs3 v - (12) vb1 (7) u, vs1 (8) vb2 (4) v, vs2 (5) vb3 (1) w, vs3 (2) r 3 vdd (14) vss (23) r 1 r 2 rg1 rg3 rg5 driver ic lo1 16 lo3 14 lo2 15 rg2 rg4 rg6 i trip (22) hin1 (15) hin2 (16) hin3 (17) lin1 (18) lin2 (19) lin3 (20) v (10) + vth (13) c2 c1 fault (21) thermistor r 4 r s
IRAMS10UP60B www.irf.com 3 inverter section switching characteristics @ t j =25c thermal resistance symbol parameter min typ max units conditions r th(j-c) junction to case thermal resistance, each igbt under inverter operation. --- 4.2 4.7 c/w r th(j-c) junction to case thermal resistance, each diode under inverter operation. --- 5.5 6.5 c/w r th(c-s) thermal resistance case to sink --- 0.1 --- c/w flat, greased surface. heatsink compound thermal conductivity - 1w/mk symbol parameter min typ max units e on turn-on switching loss --- 200 235 e off turn-off switching loss --- 75 100 e tot total switching loss --- 275 335 t j =25c e on turn-on swtiching loss --- 300 360 t j =150c e off turn-off switching loss --- 135 165 e tot total switching loss --- 435 525 erec diode reverse recovery energy --- 30 40 m j t rr diode reverse recovery time --- 100 145 ns rbsoa reverse bias safe operating area scsoa short circuit safe operating area 10 --- --- m s full square t j =150c, i c =5a, v p =600v v + =480v, v dd =+15v to 0v see ct3 conditions i c =5a, v + =400v v dd =15v, l=1mh see ct1 energy losses include "tail" and diode reverse recovery t j =150c, v p =600v, v + =360v, v dd =+15v to 0v see ct2 m j m j t j =150c, v + =400v v dd =15v, i f =5a, l=1mh inverter section electrical characteristics @ t j =25c symbol parameter min typ max units conditions v (br)ces collector-to-emitter breakdown voltage 600 --- --- v v in =5v, i c =250 m a d v (br)ces / d t temperature coeff. of breakdown voltage --- 0.57 --- v/c v in =5v, i c =1.0 m a (25c - 150c) --- 1.7 2.0 i c =5a t j =25c, v dd =15v --- 2.0 2.4 i c =5a t j =150c --- 5 15 v in =5v, v + =600v --- 10 40 v in =5v, v + =600v, t j =150c --- 1.8 2.35 i c =5a --- 1.3 1.7 i c =5a, t j =150c i bus_trip current protection threashold (positive going) 13.1 16.4 a t j =-40c to 150c v m a v v ce(on) i ces v fm collector-to-emitter saturation voltage zero gate voltage collector current diode forward voltage drop
IRAMS10UP60B 4 www.irf.com static electrical characteristics driver function v bias (v dd , v bs1,2,3 )=15v, unless otherwise specified. the v in and i in parameters are referenced to v ss and are appli- cable to all six channels. (note 2) raccomended operating conditions driver function the input/output logic timing diagram is shown in figure 1. for proper operation the device should be used within the recommended conditions. all voltages are absolute referenced to . the offset is tested with all supplies biased at 15v differential (note 2) absolute maximum ratings driver function absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. all voltage pa- rameters are absolute voltages referenced to . (note 2) v ss v ss v s 14 symbol definition min max units v s1,2,3 high side offset voltage -0.3 600 v v b1,2,3 high side floating supply voltage -0.3 20 v v dd low side and logic fixed supply voltage -0.3 20 v v in input voltage lin, hin, t/i trip -0.3 v ss +15 or v cc +0.3 v t j juction temperature -40 150 c symbol definition min max units v b1,2,3 high side floating supply voltage v s +12 v s +20 v s1,2,3 high side floating supply offset voltage note 3 600 v dd low side and logic fixed supply voltage 12 20 v v in logic input voltage lin, hin v ss v ss +5 v v symbol definition min typ max units v in,th+ positive going input threshold 3.0 --- --- v v in,th- negative going input threshold --- --- 0.8 v i qbs quiescent v bs supply current --- 70 120 m a i qcc quiscent v cc supply current --- 1.6 2.3 ma i lk offset supply leakage current --- --- 50 m a i in+ input bias current (out=lo) --- 100 220 m a i in+ input bias current (out=hi) --- 200 300 m a v(i trip ) i trip threshold voltage (out=hi or out=lo) 0.44 0.49 0.54 v 10.6 11.1 11.6 v cc and v bs supply undervoltage positive going threshold v ccuv+ v bsuv+ v ccuv- v bsuv- v cc and v bs supply undervoltage negative going threshold v ccuvh v bsuvh v cc and v bs supply undervoltage i lockout hysteresis 10.9 0.2 10.4 --- 11.4 --- v v v
IRAMS10UP60B www.irf.com 5 internal ntc - thermistor characteristics note 2: for more details, see ir21363 data sheet note 3: logic operational for v s from v - -5v to v - +600v. logic state held for v s from v - -5v to v - -v bs . (please refer to dt97-3 for more details) dynamic electrical characteristics v dd =v bs =v bias =15v, pwm in =2khz, v in_on =v in _ th+ , v in_off =v in_th- t a =25c, unless otherwise specified internal current sensing resistor - shunt characteristics thermistor built-in IRAMS10UP60B i trip (22) v ss (23) f lt (21) v th (13) driver ic ntc typ units conditions r 25 resistance 100 +/- 3% k w t c = 25c r 125 resistance 2.522 10.9% k w t c = 125c b b-constant (25-50c) 4250 +/- 2% k r 2 = r 1 e [b(1/t2 - 1/t1)] -40 / 125 c 1 mw/c t c = 25c parameter temperature range typ. dissipation constant parameter units resistance 33.3 1% m w tollerance 1% max power dissipation 2.2 w temperature range -40 / 125 c symbol definition min typ max units t on input to output propagation turn-on delay time (see fig.11) - 470 - ns t off input to output propagation turn-off delay time (see fig. 11) - 615 - ns d t dead time - 290 - ns i/t trip t/i trip to six switch to turn-off propagation delay (see fig. 2) - 750 - ns t fcltrl post i trip to six switch to turn-off clear time (see fig. 2) - 9 - ms
IRAMS10UP60B 6 www.irf.com figure1. input/output timing diagram note 4: the shaded area indicates that both high-side and low-side switches are off and therefore the half-bridge output voltage would be determined by the direction of current flow in the load. ho lo u,v,w ic driver v+ hin1,2,3 lin1,2,3 (15,16,17) (18,19,20) (8,5,2) itrip u,v,w 0 0 1 v+ 0 1 0 0 0 1 1 x 1 x x x hin1,2,3 lin1,2,3 ho1,2,3 lo1,2,3 itrip u,v,w hin1,2,3 lin1,2,3
IRAMS10UP60B www.irf.com 7 note 5: the shaded area indicates that both high-side and low-side switches are off and therefore the half-bridge output voltage would be determined by the direction of current flow in the load. figure 2. i trip timing waveform lin1,2,3 hin1,2,3 t fltclr 50% u,v,w i bus_trip 6 m s 1 m s i bus sequence of events: 1-2) current begins to rise 2) current reaches i bus_trip level 2-3) current is higher than i bus_trip for at least 6 m s. this value is the worst-case condition with very low over-current. in case of high current (short circuit), the actual delay will be smaller. 3-4) delay between driver identification of over-current condition and disabling of all outputs 4) current starts decreasing, eventually reaching 0 5) current goes below i bus_trip , the driver starts its auto-reset sequence 6) driver is automatically reset and normal operation can resume (over-current condition must be removed by the time the drivers automatically resets itself) 3 4 2 1 5 6
IRAMS10UP60B 8 www.irf.com module pin-out description pin name description 1 vb3 high side floating supply voltage 3 2 w,vs3 output 3 - high side floating supply offset voltage 3 na none 4 vb2 high side floating supply voltage 2 5 v,vs2 output 2 - high side floating supply offset voltage 6 na none 7 vb1 high side floating supply voltage 1 8 u,vs1 output 1 - high side floating supply offset voltage 9 na none 10 v+ positive bus input voltage 11 na none 12 v- negative bus input voltage 13 vth temperature feedback 14 vdd +15v main supply 15 hin1 logic input high side gate driver - phase 1 16 hin2 logic input high side gate driver - phase 2 17 hin3 logic input high side gate driver - phase 3 18 lin1 logic input low side gate driver - phase 1 19 lin2 logic input low side gate driver - phase 2 20 lin3 logic input low side gate driver - phase 3 21 fault fault indicator 22 itrip current sense and itrip pin 23 vss negative main supply
IRAMS10UP60B www.irf.com 9 1. electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and emi problems. additional high frequency ceramic capacitor mounted close to the module pins will further improve perfor- mance. 2. in order to provide good decoupling between v cc -gnd and v b -v ss terminals, the capacitors shown connected be- tween these terminals should be located very close to the module pins. additional high frequency capacitors, typically 0.1mf, are strongly recommended. 3. value of the boot-strap capacitors depends upon the switching frequency. their selection should be made based on ir design tip dn 98-2a, application note an-1044 or figure 9. 4. current sense signal can be obtained from pin 22 and pin 23 5. after approx. 8 ms the fault is reset 6.pwm generator must be disabled within fault duration to garantee shutdown of the system, overcurrent condition must be cleared before resuming operation typical application connection IRAMS10UP60B dc bus capacitors controller 23 vs1 24 ho1 25 vb1 1 vcc 2 hin1 3 hin2 4 hin3 5 lin1 lin2 6 lin3 7 f 8 itrip 9 en 10 rcin 11 vss 12 com 13 22 vb2 21 ho2 20 vs2 19 vb3 18 ho3 17 vs3 v - (12) driver ic lo1 16 lo3 14 lo2 15 thermistor vss (23) vdd (14) vth (13) i trip (22) fault (21) lin2 (19) lin1 (18) hin3 (17) hin2 (16) hin1 (15) w, vs3 (2) vb3 (1) v, vs2 (5) vb2 (4) u, vs1 (8) vb1 (7) v (10) + lin3 (20) pwm in pwm in pwm in pwm in pwm in pwm in current feedback temperature monitor 15v 10m 0.1 m fault indicator r s cb1 cb2 cb3 3-ph ac motor
IRAMS10UP60B 10 www.irf.com figure 3. maximum sinusoidal phase current as function of switching frequency v + =400v , t j =150c, modulation depth=0.8, pf=0.6 figure 4. maximum sinusoidal phase current as function of modulation frequency v + =400v, t j =150c, t c =100c, modulation depth=0.8, pf=0.6 0 1 2 3 4 5 6 7 8 9 10 0 2 4 6 8 10 12 14 16 18 20 pwm switching frequency (khz) maximum rms output current/phase (a) . tc=100c tc=110c tc=120c 0 1 2 3 4 5 6 7 1 10 100 motor current modulation frequency (hz) maximum rms phase current (a) . 12 khz 16 khz 20 khz switching frequency:
IRAMS10UP60B www.irf.com 11 figure 5. igbt turn-on. typical turn-on waveform @t j =150c, v + =400v figure 6. igbt turn-off. typical turn-off waveform @t j =150c, v + =400v -1 0 1 2 3 4 5 6 7 8 9 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 time ( m s) current (a) -50 0 50 100 150 200 250 300 350 400 450 voltage (v) current voltage -1 0 1 2 3 4 5 6 7 8 9 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 time ( m s) current (a) -50 0 50 100 150 200 250 300 350 400 450 voltage (v) current voltage
IRAMS10UP60B 12 www.irf.com figure 7. variation of thermistor resistance with temperature figure 8. estimated maximum igbt junction temperature with thermistor tempera- ture 80 90 100 110 120 130 140 150 160 170 180 60 70 80 90 100 110 120 thermistor temperature (c) igbt junction temperature (c) vbus=400v imot=5arms fsw=20khz 1 10 100 1000 0 20 40 60 80 100 120 140 temperature (c) therimstor resistance (k w ) maximum nominal minimum
IRAMS10UP60B www.irf.com 13 figure 9. recommended minimum bootstrap capacitor value vs switching frequency 2.2 4.7 15 0 2.5 5 7.5 10 12.5 15 17.5 20 0 1.5 3 4.5 6 7.5 9 10.5 12 13.5 15 16.5 18 19.5 switching frequency (khz) capacitance ( m f) 6.8 3.3 5 10 15 20
IRAMS10UP60B 14 www.irf.com figure 11. switching parameter definitions figure 11a. input to output propagation turn-on delay time figure 11b. input to output propagation turn-off delay time figure 11c. diode reverse recovery v ce i f h in / l in t rr i rr v ce i c h in / l in t on t r 50% h in /l in 90% i c 10% i c 50% h in /l in v ce i c h in / l in t off t f 90% i c 10% i c 10% v ce
IRAMS10UP60B www.irf.com 15 figure ct1. switching loss circuit figure ct2. s.c.soa circuit ho lo u,v,w ic driver v+ lin1,2,3 5v hin1,2,3 in io pwm=4 m s ho lo u,v,w ic driver v+ lin1,2,3 hin1,2,3 in 10k 1k 5vzd v cc i o figure ct3. r.b.soa circuit in io ho lo u,v,w ic driver v+ lin1,2,3 hin1,2,3 in 10k 1k 5vzd v cc i o v p =peak voltage on the igbt die v p =peak voltage on the igbt die
IRAMS10UP60B 16 www.irf.com standard pin leadforming option notes: dimensions in mm 1- marking for pin 1 identification 2- product part number 3- lot and date code marking for mounting instruction, see an1049 package outline 027-e2d24 IRAMS10UP60B note 1 note 2 note 3
IRAMS10UP60B www.irf.com 17 ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information 12/03 package outline pin leadforming option -2 notes: dimensions in mm 1- marking for pin 1 identification 2- product part number 3- lot and date code marking data and specifications are subject to change without notice 027-e2d24 note 1 IRAMS10UP60B-2 note 2 note 3

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